Dry-etching mechanism of sputtered Pb(Zr1-xTix)O3 film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2505-2511

  Ikegami, Naokatsu ^a   Matsui, Takayuki ^a   Kanamori, Jun ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Cl2 plasma; Dry etching; Etching mechanism; Helicon wave plasma; Preferential sputtering; PZT; RBS; XPS; XRD

Indexed keywords

ANNEALING; CHLORINE; HELICONS; ION BOMBARDMENT; LEAD COMPOUNDS; PLASMAS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

HELICON WAVE PLASMA; LEAD ZIRCONYL TITANATE; PHYSICAL BOMBARDMENT; REDEPOSITION; REDISSOCIATION;

DRY ETCHING;

EID: 0030124978     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2505     Document Type: Article

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