Characteristics of a micromachined floating-gate high-electron-mobility transistor at 4.2 K

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Teh, W H ^a,b   Crook, R ^a   Smith, C G ^a   Beere, H E ^a   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFLECTION SENSORS; FLOATING GATES; MICROMECHANICAL CANTILEVERS; NANOELECTROMECHANICAL SYSTEMS (NEMS);

DOPING (ADDITIVES); ELECTRON GAS; ELECTROSTATICS; GATES (TRANSISTOR); HETEROJUNCTIONS; MICROMACHINING; RESONANCE; SEMICONDUCTING GALLIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 20544478133     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1924872     Document Type: Article

References (21)

1. G. Stemme, J. Micromech. Microeng. 1, 113 (1991).
2. H. A. C. Tilmans, M. Elwenspoek, and J. H. J. Fluitman, Sens. Actuators, A 30, 35 (1992).
3. A. N. Cleland and M. L. Roukes, Appl. Phys. Lett. 69, 2653 (1996).
4. A. Erbe, R. H. Blick, A. Tilke, A. Kriele, and J. P. Kotthaus, Appl. Phys. Lett. 73, 3751 (1998).
5. D. W. Carr, L. Sekaric, and H. G. Craighead, J. Vac. Sci. Technol. B 16, 3821 (1998).
6. S. Evoy, D. W. Carr, L. Sekaric, A. Olkhovets, J. M. Parpia, and H. G. Craighead, J. Appl. Phys. 86, 6072 (1999).
7. D. W. Carr, S. Evoy, L. Sekaric, H. G. Craighead, and J. M. Parpia, Appl. Phys. Lett. 75, 920 (1999).
8. H. C. Nathanson, W. E. Newell, R. A. Wickstrom, and J. R. Davis Jr., IEEE Trans. Electron Devices ED-14, 117 (1967).
9. H. C. Nathanson and R. A. Wickstrom, Appl. Phys. Lett. 7, 84 (1965).
10. R. G. Beck, M. A. Eriksson, R. M. Westervelt, K. L. Campman, and A. C. Gossard, Appl. Phys. Lett. 68, 3763 (1996).
11. R. G. Beck, M. A. Eriksson, M. A. Topinka, R. M. Westervelt, K. D. Maranowski, and A. C. Gossard, Appl. Phys. Lett. 73, 1149 (1998).
12. M. P. Schwarz, D. Grundler, I. Meinel, Ch. Heyn, and D. Heitmann, Appl. Phys. Lett. 76, 3564 (2000).
13. H. Yamaguchi, S. Miyashita, and Y. Hirayama, Appl. Phys. Lett. 82, 394 (2003).
14. H. X. Tang, X. M. H. Huang, M. L. Roukes, M. Bichler, and W. Wegscheider, Appl. Phys. Lett. 81, 3879 (2002).
15. J. Kirschbaum, E. M. Höhberger, R. H. Blick, W. Wegscheider, and M. Bichler, Appl. Phys. Lett. 81, 280 (2002).
16. A. N. Cleland, J. S. Aldridge, D. C. Driscoll, and A. C. Gossard, Appl. Phys. Lett. 81, 1699 (2002).
17. R. G. Knobel and A. N. Cleland, Nature (London) 424, 291 (2003).
18. W. H. Teh, C.-T. Liang, M. R. Graham, and C. G. Smith, J. Microelectromech. Syst. 12, 641 (2003).
19. W. H. Teh, J. K. Luo, M. R. Graham, A. Pavlov, and C. G. Smith, J. Micromech. Microeng. 13, 591 (2003).
20. P. Atkinson, Ph.D. thesis, University of Cambridge, 2002.
21. A. T. Sellwood, C. G. Smith, E. H. Linfield, M. Y. Simmons, and D. A. Ritchie, Rev. Sci. Instrum. 72, 2100 (2001).