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Applied Physics Letters

Volumn 82, Issue 3, 2003, Pages 394-396

Microelectromechanical displacement sensing using InAs/AlGaSb heterostructures

(3) Yamaguchi, Hiroshi a Miyashita, Sen b Hirayama, Yoshiro a,c

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

b NTT Advanced Technology Corporation (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; FERMI LEVEL; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

MICROELECTROMECHANICAL DISPLACEMENT SENSING;

MICROELECTROMECHANICAL DEVICES;

EID: 0037455331 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1537047 Document Type: Article

Times cited : (28)

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