Fully silicided metal gates for high performance CMOS technology

Proceedings - Electrochemical Society

Volumn 1, Issue , 2004, Pages 341-353

  Maszara, W P ^a  

^a AMD ^*

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DIELECTRIC RELAXATION; ELECTRIC RESISTANCE; ELECTRONICS PACKAGING; GATES (TRANSISTOR); POLYSILICON; RELIABILITY; SCANNING ELECTRON MICROSCOPY;

BAND GAP; FULL SILICIDATION (FUS); GATE DIELECTRICS; METAL GATE ELECTRODES;

CMOS INTEGRATED CIRCUITS;

EID: 5744237333     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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