Analytical model of body factor in short channel bulk MOSFETs for low voltage applications

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1763-1766

  Kumar, Anil ^a   Nagumo, Toshiharu ^a   Tsutsui, Gen ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Body factor; MOSFETs; Subthreshold factor

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

BODY FACTOR; DRAIN CURRENT; GATE VOLTAGE; SUBTHRESHOLD FACTOR;

MOSFET DEVICES;

EID: 3142700933     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.011     Document Type: Conference Paper

References (5)

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