Enhancement of adjustable threshold voltage range by substrate bias due to quantum confinement in ultrathin body SOI pMOSFETs

IEEE Transactions on Nanotechnology

Volumn 2, Issue 4, 2003, Pages 314-318

  Tsutsui, Gen ^a   Nagumo, Tashiharu ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Body effect factor; Quantum confinement effects; Threshold voltage; Ultrathin body SOI MOSFET; Variable threshold CMOS (VTCMOS)

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; FABRICATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THRESHOLD VOLTAGE;

BODY EFFECT FACTORS; QUANTUM CONFINEMENT; ULTRATHIN BODY;

MOSFET DEVICES;

EID: 3042847050     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.820985     Document Type: Conference Paper

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