Deuteron implantation into hexagonal silicon carbide: Defects and deuterium behaviour

EPJ Applied Physics

Volumn 23, Issue 1, 2003, Pages 11-18

  Shiryaev, A ^a,b   Van Veen, A ^a   Rivera, A ^a   Van Huis, M ^a   Bus, T ^a   Arnoldbik, W M ^c   Tomozeiu, N ^c   Habraken, F H P M ^c   Delamare, R ^d   Ntsoenzok, E ^d  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

^c UTRECHT UNIVERSITY   (Netherlands)

^d CERI/CEA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DEUTERIUM; ELECTRON TRAPS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; LIGHT ABSORPTION; MOLECULAR STRUCTURE; OPTICAL VARIABLES MEASUREMENT; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTOR DOPING;

DEUTERON IMPLANTATION; ELASTIC RECOIL DETECTION ANALYSIS; HEXAGONAL SILICON CARBIDE; INTERSTITIAL MOLECULES; OPTICAL ADSORPTION;

SILICON CARBIDE;

EID: 20244388601     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2002116     Document Type: Article

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