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Volumn 166, Issue , 2000, Pages 374-378
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Irradiation effects and thermal annealing behavior in H2+-implanted 6H-SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL LATTICES;
HYDROGEN;
ION IMPLANTATION;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SINGLE CRYSTALS;
BLISTERING;
DAMAGE ACCUMULATION;
SILICON CARBIDE;
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EID: 0033738182
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(99)01050-2 Document Type: Article |
Times cited : (28)
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References (15)
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