Characterization of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering

Applied Surface Science

Volumn 149, Issue 1, 1999, Pages 148-150

  Anwand, W ^a   Brauer, G ^a   Coleman, P G ^b   Voelskow, M ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF EAST ANGLIA   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ION CHANNELING; SLOW POSITRON IMPLANTATION SPECTROSCOPY (SPIS); VACANCY-LIKE DEFECTS;

SILICON CARBIDE;

EID: 0032657928     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00191-9     Document Type: Article

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