Compositional changes of SiC/Si structure during vacuum annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3319-3325

  Sun, Yong ^a   Sonoda, Nobuo ^b   Miyasato, Tatsuro ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b Quality Evaluation and Chemical Analysis Department   (Japan)

Author keywords

Carbon layer; Composition; Crack; Cubic SiC film; Defect; Gasification; Hollow void; Hydrogen plasma; Shrinking; Si substrate; Vacuum annealing

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRACKS; CRYSTALLIZATION; GASIFICATION; SEMICONDUCTING SILICON COMPOUNDS; SHRINKAGE; SILICON CARBIDE; SILICON WAFERS; STRESS ANALYSIS; THERMAL EFFECTS; VACUUM APPLICATIONS;

VACUUM ANNEALING;

SEMICONDUCTING FILMS;

EID: 0034204666     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3319     Document Type: Article

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