MOCVD-grown InGaN/GaN MQW LEDs on Si(111)

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 267-271

  Poschenrieder, M ^a   Fehse, K ^a   Schulz, F ^a   Blasing J ^a   Witte, H ^a   Krtschil, A ^a   Dadgar, A ^a   Diez, A ^a   Christen, J ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; EFFICIENCY; ELECTROLUMINESCENCE; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; ORGANIC CHEMICALS; ORGANOMETALLICS; QUANTUM EFFICIENCY; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION;

BLOCKING LAYERS; INJECTED CARRIERS; INTERNAL QUANTUM EFFICIENCY; IV CHARACTERISTICS; METAL ORGANIC CHEMICAL VAPOUR DEPOSITIONS; QUANTUM WELL INTERFACES; SI(111) SUBSTRATE; STRUCTURAL DEFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20144376142     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390040     Document Type: Conference Paper

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