Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 95-98

  Sakharov, A V ^a,b   Usikov, A S ^a,b   Lundin, W V ^a,b   Tsatsulnikov, A F ^a   Tu, Ru Chin ^b   Yin, Sun Bin ^b   Chi, Jim Y ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541057     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<95::AID-PSSB95>3.0.CO;2-Q     Document Type: Article

References (3)

1. W. V. LUNDIN, A. V. SAKHAROV, V. A. SEMENOV, A. S. USIKOV, M. V. BAIDAKOVA. I. L. KRESTNIKOV, and N. N. LEDENTSOV, Proc. of 7th Internat. Symp. Nanostructures: Physics and Technology, St. Petersburg (Russia), June 14-18, 1999 Ioffe Institute 1999 (p. 485).
2. N. DUXBURY, P. DAWSON, U. BANGERT, E. J. THRUSH, W. VAN DER STRICHT, K. JACOBS, and I. MOERMAN, phys. stat. sol. (b) 216, 355 (1999).
3. R. MARTIN, P. G. MIDDLETON, and K. P. O'DONNELL, Appl. Phys. Lett. 74, 263 (1999).