Influence of UV light-assisted annealing on optical properties of InGaN/GaN heterostructures grown by MOVPE

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 175-179

  Marko, I P ^a   Lutsenko, E V ^a   Pavlovskii, V N ^a   Yablonskii, G P ^a   Schon O ^b   Protzmann, H ^b   Lunenburger M ^b   Heuken, M ^b   Schineller, B ^c   Heime, K ^c  

^a B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^b AIXTRON AG   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033229367     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<175::AID-PSSB175>3.0.CO;2-K     Document Type: Article

References (3)

1. I. AKASAKI, Proc. 2nd ISBLED. Chiba 1998 (p. 9), Ed. K. ONABE, Tokyo: Ohmsha LTD.
2. G. P. YABLONSKII, E. V. LUTSENKO, I. P. MARKO, O. SCHÖN, M. HEUKEN, B. SCHINELLER, A. GUTZEIT, M. SCHWAMBERA, P. H. LIM, and K. HEIME, Proc. 2nd ISBLED, Chiba 1998 (p. 389), Ed. K. ONABE, Tokyo: Ohmsha LTD.
3. S. CHICHIBU, T. SOTA, K. WADA, and S. NAKAMURA, J. Vac. Sci. Technol. B 1, 2204 (1998).