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20144376040
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9 with the Ni content varying between the extremes given by the chemical formulae shown. The Ni content of the rods may vary between these extremes.
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20144376542
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2. To estimate the rate r, we used the measured growth rates and assumed the rods were 10 nm wide and consisted of one oxygen/cation bilayer. These physical dimensions are based on our STM observations.
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28
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20144370089
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note
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The heights of the rods in AFM images taken in both ultrahigh vacuum and ambient conditions ranged from 2 to 10 Å. The noise level in our ultrahigh-vacuum images was too high to allow for an accurate absolute height determination based on the height of substrate steps in the images.
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30
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20144364570
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note
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3 patches never imaged as pits, even when the sample bias was very low. The apparent heights of the films in Ref. 12 were fixed at 0.0 Å in the voltage window from -4.8 to 1.0 V, as if tunneling through the vacuum and the film to the NiAl substrate were negligibly different than tunneling through only the vacuum to the substrate.
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31
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20144375520
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note
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We note that recent scanning tunneling spectroscopy (STS) measurements (Ref. 32) have shown that the conductance of the NiAl (110) surface increases sharply as the sample bias is raised above 2 V (i.e., that there is a sharp increase in the density of empty states or the edge of a surface "pseudogap," located 2 V above the Fermi level). The increase in conductance of the NiAl (110) surface occurs at approximately the same voltage at which we observe the increase in the apparent height of the nanorods. We suggest that the onset of the empty states of the oxide plays a far more important role than those of the substrate in determining the relative height of the oxide. Changes in the conductivity of the substrate alone cannot explain why the rods image as trenches at low biases and as projections at high biases.
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32
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