Characterization of deep defects responsible for the quenching behavior in undoped GaN layers

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 12, 2005, Pages

  Witte, H ^a   Schrenk, E ^a   Flugge K ^a   Krost, A ^a   Christen, J ^a   Kuhn, B ^b   Scholz, F ^a,c  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; GALLIUM NITRIDE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL REACTION; COATED PARTICLE; MATERIAL COATING; PHASE SEPARATION; PHOTOCHEMICAL QUENCHING; SEPARATION TECHNIQUE; SPECTROSCOPY; SPIN TRAPPING; THERMAL STIMULATION; VAPORIZATION;

EID: 20044394439     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.125213     Document Type: Article

References (13)

1. P. B. Klein, S. C. Binari, J. A. Freitas, and A. E. Wickenden, J. Appl. Phys. 88, 2843 (2000).
2. H. Witte, A. Krtschil, M. Lisker, E. Schrenk, J. Christen, A. Krost, B. Kuhn, and F. Scholz, Appl. Phys. Lett. 82, 4083 (2003).
3. Z. Q. Fang, B. B. Claflin, D. C. Look, T. M. Myers, D. D. Koleske, A. E. Wickenden, and R. L. Henry, in GaN and Related Alloys, edited by C. Wetzel, E. T. Yu, J. S. Speck, A. Rizzi, and Y. Arakawa, MRS Symposia Proceedings No. 743 (Materials Research Society, Pittsburgh, 2002), Vol. 743, p. L11.33.
4. U. V. Desnica, M. Pavlovic, Z. Q. Fang, and D. C. Look, J. Appl. Phys. 92, 4126 (2002).
5. D. V. Desnica, J. Electron. Mater. 21, 463 (1992).
6. R. Fasbender, G. Hirt, M. Thoms, and A. Wickacker, Semicond. Sci. Technol. 11, 935 (1996).
7. W. H. Jung, T. W. Kang, T. W. Kim, and K. S. Chung, Jpn. J. Appl. Phys., Part 2 39, L1084 (2000).
8. W. H. Jung, T. W. Kang, and T. W. Kim, Jpn. J. Appl. Phys., Part 2 41, L509 (2002).
9. T. Takamori, J. Appl. Phys. 69, 8222 (1991).
10. H. Marquet, J.-C. Merle, and J.-G. Gies, Opt. Mater. (Amsterdam, Neth.) 14, 277 (2000).
11. Z.-Q. Fang and D. C. Look, Appl. Phys. Lett. 59, 48 (1991).
12. R. Chen, Br. J. Appl. Phys., J. Phys. D 2, 371 (1969).
13. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, G. Dang, A. P. Zhang, F. Ren, X. A. Cao, S. J. Pearton, and R. G. Wilson, J. Vac. Sci. Technol. B 18, 1237 (2000).