The 'fractional thermally stimulated current' (FTSC) method: Application to deep impurity levels in semi-insulating InP

Semiconductor Science and Technology

Volumn 11, Issue 6, 1996, Pages 935-940

  Fasbender, R ^a   Hirt, G ^a   Thoms, M ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; IMPURITIES; IRON; THERMAL EFFECTS;

THERMALLY STIMULATED CURRENTS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030164745     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/6/015     Document Type: Article

References (11)

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3. Fang Z -Q and Look D C 1992 Traps in semi-insulating InP studied by thermally stimulated current spectroscopy Proc. 4th Int. Conf. on InP and Related Materials (New York: IEEE) pp 634-7
4. Wittmann G, Fasbender R, Thoms M and Winnacker A 1993 Charge transfer phenomena in semi-insulating InP:Fe Proc. 5th Int. Conf. on InP and Related Materials (New York: IEEE) pp 325-8
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10. Hoogenstraten W 1958 Philips Res. Rep. 13 515
11. Hofmann D, Müller G and Streckuss N 1989 Semi-insulating electrical properties of undoped InP after heat treatment in a phosphorous atmosphere J. Appl. Phys. A 48 315-9