Charge transfer mechanisms between some shallow-trap centres involved in the photochromism of Bi12GeO20

Optical Materials

Volumn 14, Issue 4, 2000, Pages 277-285

  Marquet, H ^a   Merle, J C ^a   Gies, J G ^a  

^a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BLEACHING; CHARGE TRANSFER; ELECTRIC CURRENT MEASUREMENT; ELECTRON TRANSITIONS; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; OPTICAL MATERIALS; PHOTOCHROMISM; REACTION KINETICS; SINGLE CRYSTALS; THERMAL EFFECTS;

BISMUTH GERMANIUM OXIDE; ELECTRON RESERVOIRS; PHOTOCHROMIC TRANSITIONS; SHALLOW TRAP; THERMALLY STIMULATED CURRENT;

BISMUTH COMPOUNDS;

EID: 0034249205     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(00)00005-7     Document Type: Article

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