Deep-defect-induced quenching effects in semi-insulating GaN layers detected by photoelectrical spectroscopic techniques

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4083-4085

  Witte, H ^a   Krtschil, A ^a   Lisker, M ^a   Schrenk, E ^a   Christen, J ^a   Krost, A ^a   Kuhn, B ^b   Scholz, F ^b  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; LIGHT EMITTING DIODES; LIGHTING; PHOTOCURRENTS; QUENCHING; SEMICONDUCTOR LASERS;

OPTICAL ADMITTANCE SPECTROSCOPY (OAS);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037828886     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579556     Document Type: Article

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