Hydrogenation and annealing effects on deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 5, 2002, Pages

  Jung, Woon Hyung ^a   Kang, Tae Won ^a,b   Kim, Tae Whan ^a  

^a Dongguk University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

Annealing; Hydrogenation; n GaN epilayer; Trap level

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; HALL EFFECT; HYDROGENATION; INDUCTIVELY COUPLED PLASMA; NITROGEN; OPTOELECTRONIC DEVICES; SAPPHIRE; SUBSTRATES;

DEEP LEVELS; GALLIUM NITRIDE FILM; HALL EFFECT MEASUREMENT; THERMALLY STIMULATED CURRENT MEASUREMENTS;

GALLIUM NITRIDE;

EID: 0036576127     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l509     Document Type: Letter

References (30)