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Volumn 39, Issue 11 A, 2000, Pages

Activation energy, capture cross section, and emission frequency of the trap level in unintentionally doped n-type GaN epilayers grown on sapphire substrates in a nitrogen-rich atmosphere

(4) Jung, Woon Hyung a Kang, Tae Won a Kim, Tae Whan b Chung, Kwan Soo c

a Dongguk University (South Korea)

b Kwangwoon University (South Korea)

c Kyung Hee University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON TRAPS; MOLECULAR BEAM EPITAXY; NITROGEN; SAPPHIRE; SEMICONDUCTOR DOPING; SUBSTRATES;

GALLIUM NITRIDE EPILAYERS; THERMAL SIMULATED CURRENTS (TSC);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034318569 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l1084 Document Type: Article

Times cited : (5)

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