메뉴 건너뛰기




Volumn 39, Issue 5, 2005, Pages 408-414

Incorporation of dust particles into a growing film during silicon dioxide deposition from a TEOS/O2 plasma

Author keywords

[No Author keywords available]

Indexed keywords

AEROSOLS; CONFINED FLOW; ELECTRIC CHARGE; SILICON COMPOUNDS; SUBSTRATES; THIN FILMS;

EID: 20044389302     PISSN: 02786826     EISSN: None     Source Type: Journal    
DOI: 10.1080/027868290950257     Document Type: Article
Times cited : (7)

References (23)
  • 3
    • 0001351475 scopus 로고    scopus 로고
    • Ion dynamics model for collisionless radio frequency sheaths
    • Bose, D., Govindan, T. R., and Meyyappan, M. (2000). Ion Dynamics Model for Collisionless Radio Frequency Sheaths, J. Appl. Phys. 87:7176-7184.
    • (2000) J. Appl. Phys. , vol.87 , pp. 7176-7184
    • Bose, D.1    Govindan, T.R.2    Meyyappan, M.3
  • 4
    • 0343562241 scopus 로고    scopus 로고
    • Charge issues in high oxygen gas ratio tetraethylorthosilicate plasma enhanced chemical vapor deposition films
    • DeCrosta, D. A., Hackenberg, J. J., and Linn, J. H. (1996). Charge Issues in High Oxygen Gas Ratio Tetraethylorthosilicate Plasma Enhanced Chemical Vapor Deposition Films, J. Vac. Sci. Technol. A 14:709-713.
    • (1996) J. Vac. Sci. Technol. A , vol.14 , pp. 709-713
    • DeCrosta, D.A.1    Hackenberg, J.J.2    Linn, J.H.3
  • 5
    • 0001515056 scopus 로고    scopus 로고
    • Particle generation and thin film surface morphology in the tetraethylorthosilicate/ oxygen plasma enhanced chemical vapor deposition process
    • Fujimoto, T., Okuyama, K., Shimada, M., Fujishige, Y., Adachi, M., and Matsui, I. (2000). Particle Generation and Thin Film Surface Morphology in the Tetraethylorthosilicate/ Oxygen Plasma Enhanced Chemical Vapor Deposition Process, J. Appl. Phys. 88:3047-3052.
    • (2000) J. Appl. Phys. , vol.88 , pp. 3047-3052
    • Fujimoto, T.1    Okuyama, K.2    Shimada, M.3    Fujishige, Y.4    Adachi, M.5    Matsui, I.6
  • 6
    • 0001744655 scopus 로고    scopus 로고
    • Particle accumulation in a flowing silane discharge
    • Jelenkovic, B. M., and Gallagher, A. (1997). Particle Accumulation in a Flowing Silane Discharge, J. Appl. Phys. 82:1546-1553.
    • (1997) J. Appl. Phys. , vol.82 , pp. 1546-1553
    • Jelenkovic, B.M.1    Gallagher, A.2
  • 7
    • 0141730294 scopus 로고    scopus 로고
    • Measurement of trapping behavior of dust particles during plasma process by suck-out method
    • Kondo, K., Imajo, Y., Shimada, M., and Okuyama, K. (2003). Measurement of Trapping Behavior of Dust Particles during Plasma Process by Suck-Out Method (in Japanese), Kagaku Kogaku Ronbunshu 29:513-520.
    • (2003) Kagaku Kogaku Ronbunshu , vol.29 , pp. 513-520
    • Kondo, K.1    Imajo, Y.2    Shimada, M.3    Okuyama, K.4
  • 8
    • 0024131141 scopus 로고
    • Analytical solution for capacitive RF sheath
    • Lieberman, M. A. (1988). Analytical Solution for Capacitive RF Sheath, IEEE Trans. Plasma Sci. 16:638-644.
    • (1988) IEEE Trans. Plasma Sci. , vol.16 , pp. 638-644
    • Lieberman, M.A.1
  • 10
    • 0000327135 scopus 로고    scopus 로고
    • Fokker-planck description of particle charging in ionized gases
    • Matsoukas, T., and Russell, M. (1996). Fokker-Planck Description of Particle Charging in Ionized Gases, Phys. Rev. E 55:991-994.
    • (1996) Phys. Rev. E , vol.55 , pp. 991-994
    • Matsoukas, T.1    Russell, M.2
  • 11
  • 12
    • 0034228019 scopus 로고    scopus 로고
    • Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process
    • Moriya, T., Ito, N., Uesugi, F., Hayashi, Y., and Okamura, K. (2000). Generation of Positively Charged Particles at an Anode and Transport to Device Wafers in a Real Radio Frequency Plasma Etching Chamber for Tungsten Etch-Back Process, J. Vac. Sci. Technol. A 18:1282-1286.
    • (2000) J. Vac. Sci. Technol. A , vol.18 , pp. 1282-1286
    • Moriya, T.1    Ito, N.2    Uesugi, F.3    Hayashi, Y.4    Okamura, K.5
  • 13
    • 0035356766 scopus 로고    scopus 로고
    • Equilibrium and relaxation of paniculate charge in fluorocarbon plasmas
    • Ostrikov, K. N., Kumar, S., and Sugai, H. (2001). Equilibrium and Relaxation of Paniculate Charge in Fluorocarbon Plasmas, J. Appl. Phys. 89:5919-5926.
    • (2001) J. Appl. Phys. , vol.89 , pp. 5919-5926
    • Ostrikov, K.N.1    Kumar, S.2    Sugai, H.3
  • 14
    • 0002003697 scopus 로고
    • The role of oxygen excitation and loss in plasma-enhanced deposition of silicon dioxide from tetraethylorthosilicate
    • Raupp, G. B., Cale, T. S., and Hey, H. P. W. (1992). The Role of Oxygen Excitation and Loss in Plasma-Enhanced Deposition of Silicon Dioxide from Tetraethylorthosilicate, J. Vac. Sci. Technol. B 10:37-45.
    • (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 37-45
    • Raupp, G.B.1    Cale, T.S.2    Hey, H.P.W.3
  • 16
    • 33646175630 scopus 로고
    • In situ laser diagnostic studies of plasma-generated paniculate contamination
    • Selwyn, G. S., Singh, J., and Bennet, R. S. (1989). In Situ Laser Diagnostic Studies of Plasma-Generated Paniculate Contamination, J. Vac. Sci. Technol. A 13:2758-2765.
    • (1989) J. Vac. Sci. Technol. A , vol.13 , pp. 2758-2765
    • Selwyn, G.S.1    Singh, J.2    Bennet, R.S.3
  • 18
    • 0037824579 scopus 로고    scopus 로고
    • Characterization of particle contamination in process steps during plasma-enhanced chemical vapor deposition operation
    • Setyawan, H., Shimada, M., Imajo, Y., Hayashi, Y., and Okuyama, K. (2003). Characterization of Particle Contamination in Process Steps during Plasma-Enhanced Chemical Vapor Deposition Operation, J. Aerosol Sci. 34:923-936.
    • (2003) J. Aerosol Sci. , vol.34 , pp. 923-936
    • Setyawan, H.1    Shimada, M.2    Imajo, Y.3    Hayashi, Y.4    Okuyama, K.5
  • 19
    • 0037169327 scopus 로고    scopus 로고
    • Visualization and numerical simulation of fine particle transport in a low-pressure parallel plate chemical vapor deposition reactor
    • Setyawan, H., Shimada, M., Ohtsuka, K., and Okuyama, K. (2002). Visualization and Numerical Simulation of Fine Particle Transport in a Low-Pressure Parallel Plate Chemical Vapor Deposition Reactor, Chem. Eng. Sci. 57:497-506.
    • (2002) Chem. Eng. Sci. , vol.57 , pp. 497-506
    • Setyawan, H.1    Shimada, M.2    Ohtsuka, K.3    Okuyama, K.4
  • 20
    • 0036656360 scopus 로고    scopus 로고
    • Investigation of nitrogen atoms in low-pressure nitrogen plasmas using a compact electron-beam-excited plasma source
    • Tada, S., Takashima, S., Ito, M., Hamagaki, M. Hori, M., and Goto, T. (2002). Investigation of Nitrogen Atoms in Low-Pressure Nitrogen Plasmas Using a Compact Electron-Beam-Excited Plasma Source, Jpn. J. Appl. Phys. 41 (Part 1):4691-4695.
    • (2002) Jpn. J. Appl. Phys. , vol.41 , Issue.PART 1 , pp. 4691-4695
    • Tada, S.1    Takashima, S.2    Ito, M.3    Hamagaki, M.4    Hori, M.5    Goto, T.6
  • 21
    • 21144482510 scopus 로고
    • Deposition of silicon oxide films from TEOS by low frequency plasma chemical vapor deposition
    • Tochitani, G., Shimozuma, M., and Tagashira, H. (1993). Deposition of Silicon Oxide Films from TEOS by Low Frequency Plasma Chemical Vapor Deposition, J. Vac. Sci. Technol. A 11:400-405.
    • (1993) J. Vac. Sci. Technol. A , vol.11 , pp. 400-405
    • Tochitani, G.1    Shimozuma, M.2    Tagashira, H.3
  • 22
    • 0041900120 scopus 로고    scopus 로고
    • Characterization of deposition process. Microstructure and interfacial states of silicon dioxide film using tetraethylorthosilicate/O2 with various dilution gases
    • Yi, C., Kim, H. U., and Rhee, S. W. (2001). Characterization of Deposition Process, Microstructure and Interfacial States of Silicon Dioxide Film Using Tetraethylorthosilicate/O2 with Various Dilution Gases, J. Electrochem. Soc. 148:C679-C684.
    • (2001) J. Electrochem. Soc. , vol.148
    • Yi, C.1    Kim, H.U.2    Rhee, S.W.3
  • 23
    • 0037037938 scopus 로고    scopus 로고
    • Self-consistent nonlinear resonance and hysteresis of a charged microparticle in a rf sheath
    • Wang, Y. N., Hou, L. J., and Wang, X. (2002). Self-Consistent Nonlinear Resonance and Hysteresis of a Charged Microparticle in a rf Sheath, Phys. Rev. Lett. 89:155001-1-155001-4.
    • (2002) Phys. Rev. Lett. , vol.89
    • Wang, Y.N.1    Hou, L.J.2    Wang, X.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.