Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1282-1286

  Moriya, Tsuyoshi ^a   Ito, Natsuko ^a   Uesugi, Fumihiko ^a   Hayashi, Yuji ^a   Okamura, Koji ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; LASER BEAMS; LIGHT SCATTERING; PLASMA ETCHING; POSITIVE IONS; TRANSPORT PROPERTIES; TUNGSTEN;

NEGATIVE SELF-BIAS VOLTAGE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0034228019     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582341     Document Type: Article

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