Effects of Hf sources, oxidizing agents, and NH3 radicals on properties of HfAlOx films prepared by atomic layer deposition

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Volumn , Issue , 2003, Pages 32-37

  Kawahara, T ^a   Torii, K ^a   Mitsuhashi, R ^a   Mutoh, A ^a   Horiuchi, A ^a   Ito, H ^a   Kitajima, H ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Argon; Atomic layer deposition; Dielectric measurements; Hafnium; High K dielectric materials; High K gate dielectrics; Impurities; Inductors; Plasma temperature; Semiconductor films

Indexed keywords

ARGON; ATOMIC LAYER DEPOSITION; DEPOSITION; DEPOSITION RATES; ELECTRIC INDUCTORS; FILMS; GATE DIELECTRICS; HAFNIUM; IMPURITIES;

DIELECTRIC MEASUREMENTS; HIGH- K GATE DIELECTRICS; HIGH-K DIELECTRIC MATERIALS; PLASMA TEMPERATURE; SEMICONDUCTOR FILMS;

DIELECTRIC MATERIALS;

EID: 84945123266     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2003.159177     Document Type: Conference Paper

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