Physical and electrical properties of Al2O3, HfO2, and their alloy films prepared by atomic layer deposition for 65 nm CMOS gate dielectric

Materials Research Society Symposium - Proceedings

Volumn 745, Issue , 2002, Pages 155-160

  Kawahara, Takaaki ^a   Torii, Kazuyoshi ^a   Fukuda, Seiichi ^a   Maeda, Takeshi ^a   Horiuchi, Atsushi ^a   Ito, Hiroyuki ^a   Muto, Akiyoshi ^a   Kalo, Yoshitake ^a   Kitajima, Hiroshi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CAPACITORS; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; HEAT TREATING FURNACES; PERMITTIVITY; PHASE SEPARATION; POLYSILICON;

ATOMIC LAYER DEPOSITION;

METALLIC FILMS;

EID: 0037617766     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-745-n5.6     Document Type: Conference Paper

References (8)

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