Investigations of metal gate electrodes on HfO2 gate dielectrics

Materials Research Society Symposium Proceedings

Volumn 811, Issue , 2004, Pages 137-148

  Schaeffer, Jamie ^a   Samavedam, Sri ^a   Fonseca, Leonardo ^a   Capasso, Cristiano ^a   Adetutu, Olubunmi ^a   Gilmer, David ^a   Hobbs, Chris ^a   Luckowski, Eric ^a   Gregory, Rich ^a   Jiang, Zhi Xiong ^a   Liang, Yong ^a   Moore, Karen ^a   Roan, Darrell ^a   Nguyen, Bich Yen ^a   Tobin, Phil ^a   White, Bruce ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; FERMI LEVEL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOSFET DEVICES; POLYSILICON; SURFACE CHEMISTRY; THRESHOLD VOLTAGE;

DRAIN INDUCED BARRIER LOWERING (DIBL); ELECTRICAL STABILITY; FERMI LEVEL PINNING; METAL GATE ELECTRODES;

ELECTRODES;

EID: 19944431838     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-811-d4.1     Document Type: Conference Paper

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