Dislocations as a source of micropipe development in the growth of silicon carbide

Journal of Applied Physics

Volumn 89, Issue 7, 2001, Pages 4139-4141

  Cherednichenko, D I ^a   Khlebnikov, Y I ^b   Khlebnikov, I I ^a   Drachev, R V ^a   Sudarshan, T S ^a  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

^b Bandgap Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035309493     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1332422     Document Type: Article

References (12)

1. F. C. Frank, Acta Crystallogr. 4, 497 (1951).
2. B. Van Der Hoek, J. P. Van Der Eerden, and P. Bennema, J. Cryst. Growth 56, 621 (1982).
3. W. W. Mullins, Metal Surface: Structure, Energetics and Kinetics (American Society For Metals, Metal Park, Ohio, 1962), Chap. 2, p. 17.
4. B. Van Der Hoek, J. P. Van Der Eerden, P. Benema, and I. Sunagawa, J. Cryst. Growth 58, 365 (1982).
5. D. S. Sanditov, G. M. Bartenev, and Sh. B. Zidipov, Phys. Chem. Glasses 4, 301 (1978).
6. A. I. Burshtain, Molekularnaya Fizika. (Novosibirsk, 1972), Vol. 2, Chap. 27, p. 201.
7. I. I. Parfenova, Yu. M. Tairov, and V. F. Tsvetkov, Sov. Phys. Semicond. 24, 158 (1990).
8. S. K. Lilov and I. Y. Yanchev, Adv. Mater. Opt. Electron. 1, 203 (1992).
9. D. Kuhlmann-Wilsdorf, Phys. Rev. 140, A1599 (1965).
10. J. Giocondi, G. S. Rohrer, M. Skowronski, V. Balakrishna, G. Augustine, H. M. Hobgood, and R. H. Hopkins, Silicon Carbide, III-Nitride and Related Materials, Sweden, 1997, p. 433.
11. J. Heindl, W. Dorsch, H. P. Strunk, St. G. Müller, R. Eckstein, D. Hofman, and A. Winnacker, Phys. Rev. Lett. 80, 740 (1998).
12. D. Hofman, M. Bickermann, W. Hartung, and A. Winnacker, Silicon Carbide and Related Materials-1999, Part 1, Research Triangle Park, NC, 1999, p. 444.