Thickness scaling of polycrystalline Pb(Zr, Ti)O3 films down to 35 nm prepared by metalorganic chemical vapor deposition having good ferroelectric properties

Applied Physics Letters

Volumn 85, Issue 10, 2004, Pages 1754-1756

  Oikawa, Takahiro ^a   Morioka, Hitoshi ^a   Nagai, Atsushi ^a   Funakubo, Hiroshi ^a   Saito, Keisuke ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b BRUKER AXS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; FERROELECTRICITY; FLUORESCENCE; LEAD COMPOUNDS; LEAKAGE CURRENTS; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICA; SURFACE PHENOMENA; THIN FILMS; TITANIUM OXIDES; X RAY DIFFRACTION; ZIRCONIUM;

CRYSTALLINITY; FERROELECTRIC RANDOM ACCESS MEMORIES (FERAM); THREE-DIMENSIONAL FERROELECTRIC CAPACITORS; X-RAY FLUORESCENCE;

POLYCRYSTALLINE MATERIALS;

EID: 4944259255     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1781354     Document Type: Article

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