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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 12 SUPPL. B, 1998, Pages

Low temperature high electron mobility in In0.75Ga0.25As/In0.75Al0.25As modulation-doped hetrostructures grown on GaAs substrate

(3) Gozu, Shin Ichirou a Hong, Chulun a Yamada, Syoji a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

Buffer (layer); Hetero structure ( junction); InAlAs; InGaAs; Low temperature mobility; Molecular beam epitaxy

Indexed keywords

CARRIER MOBILITY; INFRARED SPECTROSCOPY; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

STEP-GRADED BUFFER LAYERS;

HETEROJUNCTIONS;

EID: 0032294128 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l1501 Document Type: Article

Times cited : (41)

References (12)

1
- 0026413168
- K. Inoue, J. C. Harmand and T. Matsuno: J. Cryst. Growth 111 (1991) 313.
- (1991) J. Cryst. Growth , vol.111 , pp. 313
- Inoue, K.¹ Harmand, J.C.² Matsuno, T.³

2
- 0029305098
- T. Mishima, K. Higuchi, M. Mori and M. Kudo: J. Cryst. Growth 150 (1995) 1230.
- (1995) J. Cryst. Growth , vol.150 , pp. 1230
- Mishima, T.¹ Higuchi, K.² Mori, M.³ Kudo, M.⁴

3
- 0038845471
- J. M. Kuo, B. Lalevic and T. Y. Chang: J. Vac. Sci. & Technol. B 5 (1987) 782.
- (1987) J. Vac. Sci. & Technol. B , vol.5 , pp. 782
- Kuo, J.M.¹ Lalevic, B.² Chang, T.Y.³

4
- 0000653788
- W. P. Hong, G. I. Ng, P. K. Bhattacharya, D. Pavlidis, S. Willing and B. Das: J. Appl. Phys. 64 (1988) 1945.
- (1988) J. Appl. Phys. , vol.64 , pp. 1945
- Hong, W.P.¹ Ng, G.I.² Bhattacharya, P.K.³ Pavlidis, D.⁴ Willing, S.⁵ Das, B.⁶

5
- 0004652491
- A. Chin and T. Y. Chang: J. Vac. Sci. & Technol. B 8 (1990) 364.
- (1990) J. Vac. Sci. & Technol. B , vol.8 , pp. 364
- Chin, A.¹ Chang, T.Y.²

6
- 17144463165
- C. U. Hong, S. Gozu, J. Okayasu, M. Koyano, S. Katayama, H. Hori and S. Yamada: Appl. Surf. Sci. 130-132 (1998) 409.
- (1998) Appl. Surf. Sci. , vol.130-132 , pp. 409
- Hong, C.U.¹ Gozu, S.² Okayasu, J.³ Koyano, M.⁴ Katayama, S.⁵ Hori, H.⁶ Yamada, S.⁷

7
- 0001390447
- V. Krishnamoorthy, Y. W. Lin and R. M. Park: J. Appl. Phys. 72 (1992) 1752.
- (1992) J. Appl. Phys. , vol.72 , pp. 1752
- Krishnamoorthy, V.¹ Lin, Y.W.² Park, R.M.³

8
- 3843121187
- Cannes, Sept.
- S. Gozu, K. Tsuboki, M. Hayashi, H. Hori and S. Yamada: presented in 10th Int. Conf. MBE, Cannes, Sept. 1998.
- (1998) 10th Int. Conf. MBE
- Gozu, S.¹ Tsuboki, K.² Hayashi, M.³ Hori, H.⁴ Yamada, S.⁵

9
- 0031141890
- S. M. Wang, C. Karlsson, N. Rorsman, M. Bergh, E. Olsson, T. G. Andersson and H. Zirath: J. Cryst. Growth 175/176 (1997) 1016.
- (1997) J. Cryst. Growth , vol.175-176 , pp. 1016
- Wang, S.M.¹ Karlsson, C.² Rorsman, N.³ Bergh, M.⁴ Olsson, E.⁵ Andersson, T.G.⁶ Zirath, H.⁷

10
- 0007087108
- Th. Schapers, G. Engels, J. Lange, Th. Klocke, M. Hollfelder and H. Luth: J. Appl. Phys. 83 (1998) 4324.
- (1998) J. Appl. Phys. , vol.83 , pp. 4324
- Schapers, Th.¹ Engels, G.² Lange, J.³ Klocke, Th.⁴ Hollfelder, M.⁵ Luth, H.⁶

11
- 0004687467
- P. Ramvall, N. Carlsson, P. Omling, L. Samuelson, W. Seifert, Q. Wang, K. Ishibashi and Y. Aoyagi: J. Appl. Phys. 84 (1998) 2112.
- (1998) J. Appl. Phys. , vol.84 , pp. 2112
- Ramvall, P.¹ Carlsson, N.² Omling, P.³ Samuelson, L.⁴ Seifert, W.⁵ Wang, Q.⁶ Ishibashi, K.⁷ Aoyagi, Y.⁸

12
- 0027545521
- C. Nguyen, B. Brar, C. R. Bolognesi, J. J. Pekarik, H. Kroemer and J. H. English: J. Electron. Mater. 22 (1993) 255.
- (1993) J. Electron. Mater. , vol.22 , pp. 255
- Nguyen, C.¹ Brar, B.² Bolognesi, C.R.³ Pekarik, J.J.⁴ Kroemer, H.⁵ English, J.H.⁶

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