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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 5, 2000, Pages 2527-2533

Crack formation in tensile InGaAs/InP layers

(8) Natali, M a,c De Salvador, D a Berti, M a Drigo, A V a Lazzarini, L b Salviati, G b Rossetto, G b Torzo, G b

a UNIVERSITY OF PADOVA (Italy)

b CNR (Italy)

c CNR ICTIMA Institute ^* (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRACK PROPAGATION; RESIDUAL STRESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRAIN; TENSILE PROPERTIES;

CRACK FORMATION;

SEMICONDUCTING FILMS;

EID: 0034268612 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1312263 Document Type: Article

Times cited : (8)

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