Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 5, 2000, Pages 2513-2517

  Cordier, Y ^a   Chauveau, J M ^b   Ferre, D ^b   Dipersio, J ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; SURFACE ROUGHNESS;

METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (MM-HEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034347836     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1312260     Document Type: Article

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