Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applications

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4331-4333

  Gupta, Rohit ^a   Yoo, Won Jong ^a   Wang, Yingqian ^a   Tan, Zerlinda ^a   Samudra, Ganesh ^a   Lee, Sungjoo ^a   Chan, Daniel S H ^a   Loh, Kian Ping ^a   Bera, L K ^b   Balasubramanian, N ^b   Kwong, Dim Lee ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; EQUIVALENT OXIDE THICKNESS (EOT); GATE DIELECTRICS; GATE LEAKAGE;

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; ENERGY GAP; FLASH MEMORY; HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 2942668369     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1758297     Document Type: Article

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