Ion-implantation-induced damage to gate oxide due to charge injection and ion bombardment

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1996, Pages 206-209

  Mameno, Kazunobu ^a   Nagasawa, Hideharu ^a   Nishida, Atsuhiro ^a   Fujiwara, Hideaki ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON RESONANCE; GATES (TRANSISTOR); ION IMPLANTATION; MOS DEVICES; OXIDES; SEMICONDUCTING SILICON;

ANTENNA MOS CAPACITORS; CHARGE INJECTION; ELECTRON SPIN RESONANCE; FOURIER TRANSFORM INFRARED ATTENUATED TOTAL REFLECTANCE; GATE OXIDES; ION IMPLANTATION INDUCED DAMAGE;

CRYSTAL DEFECTS;

EID: 0029696209     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)