Reliability of thin gate oxide under plasma charging caused by antenna topography-dependent electron shading effect

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 441-444

  Noguchi, K ^a   Tokashiki, K ^a   Horiuchi, T ^a   Miyamoto, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNA TOPOGRAPHY DEPENDENT ELECTRON SHADING EFFECTS; PLASMA CHARGING DAMAGE; THIN GATE OXIDES;

ELECTRIC CHARGE; ELECTRIC RESISTANCE; ETCHING; GATES (TRANSISTOR); MOSFET DEVICES; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE;

MOS DEVICES;

EID: 84886448035     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)