Limits of strong phase shift patterning for device research

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5040 I, Issue , 2003, Pages 327-343

  Fritze, M ^a   Mallen, R ^a   Wheeler, B ^a   Yost, D ^a   Snyder, J P ^b   Kasprowicz, B ^b   Eynon, B ^b   Liu, H Y ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b NONE

Author keywords

248 nm optical lithography; Complementary phase shift; Feature slimming; Flare; Line edge roughness; OPC; Schottky barrier CMOS; Strong phase shift limits; Sub 25 nm gate features

Indexed keywords

CMOS INTEGRATED CIRCUITS; ETCHING; GATES (TRANSISTOR); IMAGING SYSTEMS; OXIDATION; PHASE SHIFT; SCHOTTKY BARRIER DIODES;

FLARE; PHASE SHIFT PATTERNING; SLIMMING PROCESSING;

PHOTOLITHOGRAPHY;

EID: 0141722432     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485332     Document Type: Conference Paper

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