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Volumn 26, Issue 10, 1997, Pages 1098-1102
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The effect of substrate surface roughness on GaN growth using MOCVD process
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Author keywords
AFM roughness; GaN buffer layer; Nitridation
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Indexed keywords
ALUMINA;
ATOMIC FORCE MICROSCOPY;
CRYSTAL DEFECTS;
FILM GROWTH;
LIGHT EMITTING DIODES;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MORPHOLOGY;
PHOTOLUMINESCENCE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR LASERS;
SUBSTRATES;
SURFACE ROUGHNESS;
BUFFER LAYERS;
GALLIUM NITRIDE;
NITRIDATION;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0031257382
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-997-0001-3 Document Type: Article |
Times cited : (16)
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References (16)
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