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Volumn 26, Issue 10, 1997, Pages 1098-1102

The effect of substrate surface roughness on GaN growth using MOCVD process

Author keywords

AFM roughness; GaN buffer layer; Nitridation

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; FILM GROWTH; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SUBSTRATES; SURFACE ROUGHNESS;

EID: 0031257382     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0001-3     Document Type: Article
Times cited : (16)

References (16)
  • 15
    • 3843143824 scopus 로고    scopus 로고
    • unpublished work
    • Dongjin Byun and Dongwha Kum, unpublished work.
    • Byun, D.1    Kum, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.