Influence of hole accumulation on the source resistance, kink effect, and on-state breakdown of InP-based HEMTs: Light irradiation study

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 456-459

  Suemitsu, T ^a   Fushimi, H ^a   Kodama, S ^a   Tsunashima, S ^a   Kimura, S ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); IMPACT IONIZATION; IRRADIATION; SEMICONDUCTING INDIUM PHOSPHIDE; THRESHOLD VOLTAGE;

KINK EFFECTS; LIGHT IRRADIATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034846292     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)