SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 318, Issue 1-2, 1998, Pages 195-200

Studying interfaces on a nm scale by BEEM

(3) Meyer, T b Sirringhaus, H a,b Von Kanel H b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b ETH ZURICH (Switzerland)

Author keywords

Ballistic electron emission microscopy; Contrast mechanism; Point defect; Scanning tunnelling microscopy

Indexed keywords

ANNEALING; COBALT ALLOYS; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRON EMISSION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; METALLIC FILMS; POINT DEFECTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM);

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032047904 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)01164-4 Document Type: Article

Times cited : (7)

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