900 V DMOS and 1100 V UMOS 4H-SiC power FETs

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 32-33

  Casady, J B ^a   Agarwal, A K ^a   Rowland, L B ^a   Valek, W F ^a   Brandt, C D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ENERGY GAP; ION IMPLANTATION; NICKEL; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS; TRANSCONDUCTANCE;

BLOCKING VOLTAGES; THRESHOLD VOLTAGES;

MOSFET DEVICES;

EID: 0030650827     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)