Controlled bond formation between chemical vapor deposition Si and ultrathin SiO2 layers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1752-1756

  Yasuda, T ^a,b   Nishizawa, M ^a,c   Yamasaki, S ^a,b   Tanaka, K ^a,b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c JRCAT Angstrom Technology Partnership (ATP)   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; COMPOSITION EFFECTS; ELECTRON BEAMS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SURFACE CHEMISTRY; SURFACE TREATMENT;

CHLOROSILANE;

SILICA;

EID: 0034188063     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591466     Document Type: Article

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