Doped Ba0.6Sr0.4TiO3thin films for microwave device applications at room temperature

Integrated Ferroelectrics

Volumn 22, Issue 1-4, 1998, Pages 291-305

  Wu, Huey Daw ^a   Barnes, Frank S ^a  

^a UCB 450   (United States)

Author keywords

Doped BST; Ferroelectric thin films; Microwave applications

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTRIC FIELDS; FERROELECTRIC MATERIALS; LASER ABLATION; MICROWAVE DEVICES; PERMITTIVITY; PHASE SHIFTERS; THIN FILM DEVICES; WAVEGUIDES;

BARIUM STRONTIUM TITANATE; INTERDIGITAL CAPACITORS;

DIELECTRIC FILMS;

EID: 0032307453     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808208050     Document Type: Article

References (4)

1. I. Burn, J. Mater. Sci., 14, 2453 (1979).
2. T. Itoh, S. Tashiro, and H. Igarashi, Jpn. J. Appl. Phys., 32, 4261 (1993).
3. H.-D. Wu, Z. Zhang, F. S. Barnes, C. M. Jackson, A. Kain, and J. D. Cuchiaro, IEEE Trans. Appl. Superconduct., 4, 156 (1994).
4. S. S. Bedair and I. Wolff, IEEE Trans. Microwave Theory Tech., 40, 41 (1992).