Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate

Journal of Applied Physics

Volumn 79, Issue 11, 1996, Pages 8841-8843

  Lau, W S ^a   Khaw, K K ^a   Qian, P W ^a   Sandler, N P ^b   Chu, P K ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b LAM RESEARCH CORPORATION   (United States)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009351625     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362510     Document Type: Article

References (9)

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