Ultrathin tantalum pent-oxide films for ULSI gate dielectrics

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 361-369

  Nishioka, Yasushiro ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; ELECTRIC INSULATORS; GATES (TRANSISTOR); MOSFET DEVICES; OXIDATION; OXIDES; PERMITTIVITY; SILICA; TANTALUM COMPOUNDS; ULSI CIRCUITS;

DRY OXYGEN ANNEALING; TANTALUM PENT OXIDE; WEAK SPOT OXIDATION;

ULTRATHIN FILMS;

EID: 0033345256     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-361     Document Type: Conference Paper

References (24)

1. H. S. Momose, M. Ono, T. Ohguro, S. Nakamura, M. Saito, and H. Iwai, IEDM Tech. Dig. p. 593, 1994.
2. G. Timp, A. Agawal, F.H. Baumann, T. Boone, M. Buonanno, R. Cirelli, V. Donnely, M. Foad, G. Grant, M. Green, H. Gossman, S. Hillenisu, J. Jackson, D. Jacobson, R. Kleiman, A. Komblit, F. Klemens, J.T.-C. Lee, W. Mansfiield, S. Moccio, A. Murrel, M. O'Malley, J. Rosamilia, J. Sapjeta, P. Siverman, T. Sorsh, W.W. Tai, D. Tennant, H. Vuong, and B. Weir, lEDMTech. Dig. p. 930,1997.
3. H. Iwai and H.S. Momose, IEDM Tech. Dig., p. 163,1998.
4. J. H. Stathis and D.J. DiMalia, IEDM Tech. Dig., p. 163,1998.
5. S. Kamiyama, T. Saeki, H. Mori, and Y. Numasawa, DM Tech. Dig., p.827,1991.
6. H.F. Luan, B.Z. Wu, L.G. Kang, B.Y. Kirn, R. Vrtis, D. Roberts, and D.L. Kwong, IEDM Tech. Dig., p. 609.
7. Y. Nishioka, H. Homma, H. Shinriki, K. Mukai, K. Yamaguchi, A. Uchida, K. Higeta, and K. Ogiue, IEDM Tech. Dig., p.42,1985.
8. N. Homma, K. Yamaguchi, H. Nambu, K. Kanetani, Y. Nishioka, A. Uchida, and K. Ogiue, IEEE J. of Solid-State Circuits, SC-21, p. 675,1986.
9. Y. Nishioka, H. Homma, H. Shinriki, K. Mukai, K. Yamaguchi, A. Uchida, K. Higeta, and K. Ogiue, IEEE Trans. Electron Devices, ED-34,1957, 1987.
10. H. Shinriki and M. Nakata, IEEE Trans. Electron Devices, 38, p. 455,1991.
11. T. Kaga, T. Kure, H. Shinriki, Y. Kawamoto, F. Murai, T. Nishida, Y. Nakagome, D. Hashimoto, T. Kisu, E. Takeda, and K. Itoh, IEEE Trans. Electron Devices, 38, p. 255,1991.
12. Y. Ohji, Y. Matsui, T. Itoga, M. Hirayama, Y. Sugawara, K. Torii, H. Miki, M. Nakata, I. Asano, S. lijima, and Y. Kawamoto, IEDM Tech. Dig. p. Ill, 1995.
13. T. Kaga, Y. Sudoh, H. Goto, K. Shoji, T. Kisu, H. Yamashita, R. Nagai, S. lijima, M. Ohkura, F. Murai, T. Tanaka, Y. Goto, N. Yokoyama, M. Horiguchi, M. Isoda, T. Nishida, and E. Takeda, DM Tech. Dig., p. 927, 1994. "
14. M. Nakata and H. Shinriki, Extended Abstract of SSDM, p. 545,1987.
15. H. Shinriki, T. Kisu, S. Kimura, Y Nishioka, Y. Kawamoto, and K. Mukai, IEEE Trans. Electron Devices, 37, p. 1939,1990.
16. Y. Momiyama, H. Minakawa, and T. Sugii, Symp. on VLSI Tech. Dig., p. 135, 1997.
17. I.C. Kizilyalli, P.K. Roy, F. Baumann, R.Y. Huang, D. Hwang, C. Chacon, R. Irwin, Y. Ma, and G. Alers, Symp. on VLSI Tech. Dig., p. 216,1998.
18. D. Park, Q. Lu, T.J. King, C. Hu, IEDM Tech. Dig., p. 381,1998.
19. A. Chatterjee, R.A. Chapman, K. Joyner, M. Otobe, S. Hattangady, M. Bevan, O.A. Brown, H. Yang, Q. He, D. Rogers, S.J. fang, R. Kraft, A.L.P. Rotondaro, M. Terry, K. Brenan, S.W. Aur, J.C. Hu, H.L. Tsai, P. Jones, G. Wilk, M. Aoki, M. Rodder, and I.C. Chen, IEDM Tech. Dig., p. 777,1998.
20. S. Kimura, Y. Nishioka, A. Shintani, and K. Mukai, J. Electrochem. Soc., 130, p. 2414, 1983.
21. Y. Nishioka, S. Kimura, and K. Mukai, Extended Abstracts of the 165th Electrochemical Society Meeting, p. 190,1984.
22. Y. Nishioka, S. Kimura, H. Shinriki, and K. Mukai, J. Electrochem. Soc., 134, p.410, 1987.
23. Y. Nishioka, H. Shinriki, and K. Mukai, J. Applied Physics, 61, p. 2335, 1987.
24. Y. Nishioka, H. Shinriki, and K. Mukai, J. Electrochem. Soc., 136, p. 872,1989.