Double injection of charge carriers in chemical vapor deposited diamond-based diodes

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 4047-4052

  Weima, J A ^a   Von Borany, J ^b   Meusinger, K ^a   Horstmann, J ^a   Fahrner, W R ^a  

^a UNIVERSITY OF HAGEN   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREA; BORON ION IMPLANTATION; CHEMICAL VAPOR DEPOSITED; CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS; FORWARD BIAS; FOUR-ORDER; FRENKEL-POOLE EMISSION; LOW CONCENTRATIONS; N-DOPED; N-TYPE CONDUCTIVITY; ONSET VOLTAGES; P-TYPE CONDUCTIVITY; PIN DIODE; RECTIFICATION RATIO; REVERSE BIAS; SPACE CHARGE LIMITED CURRENTS; TOTAL DOSE; TRAP FILLING;

BIAS VOLTAGE; CHARGE CARRIERS; DIAMOND FILMS; DIODES; ION IMPLANTATION; THERMIONIC EMISSION; VAPORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 18644367756     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1502204     Document Type: Article

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