MOSFETs on polished surfaces of polycrystalline diamond

Diamond and Related Materials

Volumn 8, Issue 10, 1999, Pages 1831-1833

  Kitatani, K ^a   Umezawa, H ^a   Tsugawa, K ^a   Ueyama, K ^a   Ishikura, T ^b   Yamashita, S ^b   Kawarada, H ^a  

^a WASEDA UNIVERSITY   (Japan)

^b TOKYO GAS CO LTD   (Japan)

Author keywords

Diamond; Hydrogen terminated; MOSFET; Polycrystalline

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; POLISHING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

DIAMOND WAFERS;

MOSFET DEVICES;

EID: 0032657947     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00121-1     Document Type: Article

References (11)

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