Hydrogen "doped" thin film diamond field effect transistors for high power applications

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2215-2223

  Looi, Hui Jin ^a   Pang, Lisa Y S ^a   Foord, John S ^b   Jackman, Richard B ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIAMOND FILMS; HYDROGEN; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THIN FILMS;

RECTIFICATION RATIO;

MESFET DEVICES;

EID: 0032297280     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00218-4     Document Type: Article

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