Advanced thermal processing of semiconductor materials in the millisecond range

Vacuum

Volumn 78, Issue 2-4, 2005, Pages 673-677

  Skorupa, W ^a   Anwand, W ^a   Panknin, D ^a   Voelskow, M ^a   Yankov, R A ^a   Gebel, T ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Nanoparc GmbH   (Germany)

Author keywords

Flash lamp annealing; Hetroepitaxy; Silicon; Silicon carbide; Ultra shallow junctions

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON CARBIDE; THERMOANALYSIS; THIN FILMS;

FLASH LAMP ANNEALING (FLA); HETROPITAXY; RAPID THERMAL ANNEALING (RTA); ULTRA SHALLOW JUNCTIONS;

SEMICONDUCTOR MATERIALS;

EID: 18544379938     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.01.105     Document Type: Conference Paper

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