Structural characterization of thin 3C-SiC films annealed by the flash lamp process

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 351-354

  Polychroniadis, E ^a   Stoemenos, J ^a   Ferro, G ^b   Monteil, Y ^b   Panknin, D ^c   Skorupa, W ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITÉ LYON 1   (France)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Annealing; Defects; Thin Films

Indexed keywords

ANNEALING; CAPACITORS; DEFECTS; EPITAXIAL GROWTH; MICROSTRUCTURE; RECRYSTALLIZATION (METALLURGY); THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

COLD WALL VERTICAL REACTOR; DEFECT DENSITY; DISCHARGE CAPACITORS; FLASH LAMP PROCESS;

SILICON CARBIDE;

EID: 8744237122     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.351     Document Type: Conference Paper

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