Improvement of the 3C-SiC/Si interface by flash lamp annealing

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 151-154

  Panknin, D ^a   Stoemenos, J ^b   Eickhoff, M ^c   Heera, V ^a   Vouroutzis, N ^b   Krotz G ^c   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; DEPOSITION; FILM GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; IRRADIATION; LIQUID PHASE EPITAXY; SILICON; STRESSES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CAVITIES; ENERGY DENSITY; FLASH LAMP ANNEALING;

SILICON CARBIDE;

EID: 8744251098     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.151     Document Type: Article

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