The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states

Applied Physics A: Materials Science and Processing

Volumn 75, Issue 5, 2002, Pages 585-590

  Cerofolini, G F ^a   Bongiorno, C ^b   Camalleri, M ^a   Condorelli, G G ^c   Fragala I L ^c   Galati, C ^a   Lorenti, S ^a   Renna, L ^a   Spinella, C ^b   Viscuso, O ^a  

^a STMICROELECTRONICS   (Italy)

^b CNR   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRON ENERGY LEVELS; HIGH RESOLUTION ELECTRON MICROSCOPY; HYDROGEN; NITROGEN; NITROGEN OXIDES; OXIDATION; X RAY SPECTROSCOPY;

HYDROGEN TERMINATED SILICON; NITRIDATION; OXYNITRIDATION; X RAY PHOTOEMISSION SPECTROSCOPY;

SILICON;

EID: 18544372564     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390101033     Document Type: Article

References (20)