Nitridation by NO or N2O of Si-SiO2 interfaces

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 135-140

  Caricato, A P ^a   Cazzaniga, F ^a   Cerofolini, G F ^a   Crivelli, B ^a   Polignano, M L ^a   Tallarida, G ^a   Valeri, S ^a   Zonca, R ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (CHEMICAL); DEFECTS; NITROGEN; NITROGEN COMPOUNDS; OXIDATION; OXIDES; PHOTOCURRENTS; SEMICONDUCTING SILICON; SILICA; STRUCTURE (COMPOSITION); TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

MOIETY FORMATION; NITRIDATION; SURFACE RECOMBINATION VELOCITY;

INTERFACES (MATERIALS);

EID: 0033335858     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-135     Document Type: Article

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